BDT61B Bipolar Transistor
Characteristics of BDT61B Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 50 W
- DC Current Gain (hfe): 750
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDT61B
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BDT61B is the
BDT60B.
Replacement and Equivalent for BDT61B transistor
You can replace the BDT61B with the
2N6045,
2N6045G,
2N6532,
2SD1195,
2SD1196,
2SD1415,
2SD1415A,
2SD1829,
2SD1830,
2SD1892,
2SD1892-P,
2SD1892-Q,
2SD2241,
2SD2495,
2SD2495-O,
2SD2495-P,
2SD2495-Y,
2SD560,
2SD560-KB,
2SD560-LB,
2SD560-MB,
2SD633,
BD649,
BD651,
BD901,
BDT61C,
BDT63B,
BDT63C,
BDT65B,
BDT65C,
BDW23C,
BDW42,
BDW42G,
BDW43,
BDW53C,
BDW53D,
BDW63C,
BDW63D,
BDW73C,
BDW73D,
BDW93C,
BDW93CF,
BDX33C,
BDX33CG,
BDX33D,
BDX53C,
BDX53CG,
KSB601,
KSB601-O,
KSB601-R,
KSB601-Y,
KSD560,
KSD560-O,
KSD560-R,
KSD560-Y,
MJF122,
MJF122G,
MJF6388,
MJF6388G,
TIP102,
TIP102G,
TIP122,
TIP122G,
TIP132,
TIP132G,
TIP142T or
TTD1415B.
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