BDW53C Bipolar Transistor
Characteristics of BDW53C Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 100 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 4 A
- Collector Dissipation: 40 W
- DC Current Gain (hfe): 750 to 20000
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-220
Pinout of BDW53C
Here is an image showing the pin diagram of this transistor.
Complementary PNP transistor
The complementary
PNP transistor to the BDW53C is the
BDW54C.
Replacement and Equivalent for BDW53C transistor
You can replace the BDW53C with the
2SD772,
2SD772A,
2SD792,
2SD792A,
BD243C,
BD539C,
BD539D,
BD543C,
BD545C,
BD649,
BD651,
BD801,
BD901,
BD953,
BD955,
BDT61B,
BDT61C,
BDT85,
BDT85F,
BDT87,
BDT87F,
BDW23C,
BDW53D,
BDW63C,
BDW63D,
BDW73C,
BDW73D,
BDX33C,
BDX33CG,
BDX33D,
BDX53C,
BDX53CG,
BDX53D,
BDX53E,
BDX53F,
MJE15028,
MJE15028G,
MJE15030,
MJE15030G,
MJF15030,
MJF15030G,
TIP41D,
TIP41E,
TIP41F,
TIP42D,
TIP42E or
TIP42F.
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