2SD1195 Bipolar Transistor
Characteristics of 2SD1195 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 100 V
- Collector-Base Voltage, max: 110 V
- Emitter-Base Voltage, max: 6 V
- Collector Current − Continuous, max: 5 A
- Collector Dissipation: 35 W
- DC Current Gain (hfe): 1500
- Transition Frequency, min: 20 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-220
Pinout of 2SD1195
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD1195 transistor
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