BCW67C Bipolar Transistor

Characteristics of BCW67C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -32 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 250 to 630
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW67C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW67C transistor can have a current gain of 250 to 630. The gain of the BCW67 will be in the range from 100 to 630, for the BCW67A it will be in the range from 100 to 250, for the BCW67B it will be in the range from 160 to 400.

Complementary NPN transistor

The complementary NPN transistor to the BCW67C is the BCW65C.

Replacement and Equivalent for BCW67C transistor

You can replace the BCW67C with the BCW68 or BCW68H.
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