BCW68H Bipolar Transistor

Characteristics of BCW68H Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 250 to 630
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW68H

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW68H transistor can have a current gain of 250 to 630. The gain of the BCW68 will be in the range from 100 to 630, for the BCW68F it will be in the range from 100 to 250, for the BCW68G it will be in the range from 160 to 400.

Complementary NPN transistor

The complementary NPN transistor to the BCW68H is the BCW66H.
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