BCW65C Bipolar Transistor

Characteristics of BCW65C Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 32 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 250 to 630
  • Transition Frequency, min: 170 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW65C

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW65C transistor can have a current gain of 250 to 630. The gain of the BCW65 will be in the range from 100 to 630, for the BCW65A it will be in the range from 100 to 250, for the BCW65B it will be in the range from 160 to 400.

Complementary PNP transistor

The complementary PNP transistor to the BCW65C is the BCW67C.

Replacement and Equivalent for BCW65C transistor

You can replace the BCW65C with the BCW66, BCW66H or FMMT619.
If you find an error please send an email to mail@el-component.com