BCW67A Bipolar Transistor

Characteristics of BCW67A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -32 V
  • Collector-Base Voltage, max: -45 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.8 A
  • Collector Dissipation: 0.35 W
  • DC Current Gain (hfe): 100 to 250
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-23

Pinout of BCW67A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BCW67A transistor can have a current gain of 100 to 250. The gain of the BCW67 will be in the range from 100 to 630, for the BCW67B it will be in the range from 160 to 400, for the BCW67C it will be in the range from 250 to 630.

Complementary NPN transistor

The complementary NPN transistor to the BCW67A is the BCW65A.

Replacement and Equivalent for BCW67A transistor

You can replace the BCW67A with the BCW68, BCW68F, FMMT591, FMMT591Q, MMBT2907, MMBT2907A, MMBT4354 or MMBT4355.
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