BC857CW Bipolar Transistor

Characteristics of BC857CW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -45 V
  • Collector-Base Voltage, max: -50 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC857CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC857CW transistor can have a current gain of 420 to 800. The gain of the BC857AW will be in the range from 110 to 220, for the BC857BW it will be in the range from 200 to 450, for the BC857W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC857CW is the BC847CW.

Replacement and Equivalent for BC857CW transistor

You can replace the BC857CW with the BC856CW, BC856W, BC860CW or BC860W.
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