BC858CW Bipolar Transistor

Characteristics of BC858CW Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -30 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC858CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC858CW transistor can have a current gain of 420 to 800. The gain of the BC858AW will be in the range from 110 to 220, for the BC858BW it will be in the range from 200 to 450, for the BC858W it will be in the range from 110 to 800.

Complementary NPN transistor

The complementary NPN transistor to the BC858CW is the BC848CW.

Replacement and Equivalent for BC858CW transistor

You can replace the BC858CW with the BC857CW, BC857W, BC859CW, BC859W, BC860CW or BC860W.
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