BC849CW Bipolar Transistor

Characteristics of BC849CW Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 30 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 0.1 A
  • Collector Dissipation: 0.2 W
  • DC Current Gain (hfe): 420 to 800
  • Transition Frequency, min: 150 MHz
  • Noise Figure, max: 1.2 dB
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: SOT-323

Pinout of BC849CW

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The BC849CW transistor can have a current gain of 420 to 800. The gain of the BC849AW will be in the range from 110 to 220, for the BC849BW it will be in the range from 200 to 450, for the BC849W it will be in the range from 110 to 800.

Complementary PNP transistor

The complementary PNP transistor to the BC849CW is the BC859CW.

Replacement and Equivalent for BC849CW transistor

You can replace the BC849CW with the BC847CW, BC847W, BC848CW, BC848W, BC850CW or BC850W.
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