2SD855 Bipolar Transistor

Characteristics of 2SD855 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 60 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 40 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD855

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD855 transistor can have a current gain of 40 to 250. The gain of the 2SD855-Q will be in the range from 70 to 150, for the 2SD855-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD855 might only be marked "D855".

Complementary PNP transistor

The complementary PNP transistor to the 2SD855 is the 2SB760.

SMD Version of 2SD855 transistor

The BCP55 (SOT-223) is the SMD version of the 2SD855 transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SD855 transistor

You can replace the 2SD855 with the 2SC1826, 2SC1985, 2SC1986, 2SC2075, 2SC3179, 2SC3851, 2SC3851A, 2SD1267, 2SD1267A, 2SD1274, 2SD1274A, 2SD1274B, 2SD313, 2SD613, 2SD823, 2SD856, 2SD856A, 2SD857, 2SD857A, BD203, BD239A, BD239B, BD239C, BD241A, BD241B, BD241C, BD243A, BD243B, BD243C, BD303, BD535, BD537, BD539A, BD539B, BD539C, BD539D, BD797, BD799, BD801, BD807, BD809, BD935, BD935F, BD937, BD937F, BD939, BD939F, BD941, BD941F, BD949, BD951, BD953, BD955, BDT29A, BDT29B, BDT29C, BDT81, BDT81F, BDT83, BDT83F, BDT85, BDT85F, BDT87, BDT87F, BDX77, MJE15028, MJE15028G, TIP41D or TIP42D.
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