2SD555-Q Bipolar Transistor

Characteristics of 2SD555-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SD555-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD555-Q transistor can have a current gain of 100 to 200. The gain of the 2SD555 will be in the range from 40 to 200, for the 2SD555-R it will be in the range from 60 to 120, for the 2SD555-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD555-Q might only be marked "D555-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD555-Q is the 2SB600-Q.

Replacement and Equivalent for 2SD555-Q transistor

You can replace the 2SD555-Q with the 2N6676, 2N6677, 2N6678, 2SC1586, 2SD746A, 2SD746A-Q, 2SD753, 2SD753-C, BUX48, BUX80, BUY69A, BUY69B, BUY69C, BUY70A, BUY70B, BUY70C, MJ10000 or MJ10001.
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