2SD555 Bipolar Transistor
Characteristics of 2SD555 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 200 V
- Collector-Base Voltage, max: 200 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 10 A
- Collector Dissipation: 200 W
- DC Current Gain (hfe): 40 to 200
- Transition Frequency, min: 15 MHz
- Operating and Storage Junction Temperature Range: -65 to +150 °C
- Package: TO-3
Pinout of 2SD555
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SD555 transistor
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