2SD555 Bipolar Transistor

Characteristics of 2SD555 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 200 V
  • Collector-Base Voltage, max: 200 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 40 to 200
  • Transition Frequency, min: 15 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3

Pinout of 2SD555

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD555 transistor can have a current gain of 40 to 200. The gain of the 2SD555-Q will be in the range from 100 to 200, for the 2SD555-R it will be in the range from 60 to 120, for the 2SD555-S it will be in the range from 40 to 80.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD555 might only be marked "D555".

Complementary PNP transistor

The complementary PNP transistor to the 2SD555 is the 2SB600.

Replacement and Equivalent for 2SD555 transistor

You can replace the 2SD555 with the 2N6676, 2N6677, 2N6678, 2SD746A, 2SD753, BUX48, BUX80, BUY69A, BUY69B, BUY69C, BUY70A, BUY70B or BUY70C.
If you find an error please send an email to mail@el-component.com