BUX80 Bipolar Transistor

Characteristics of BUX80 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 800 V
  • Emitter-Base Voltage, max: 10 V
  • Collector Current − Continuous, max: 10 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 30
  • Transition Frequency, min: 8 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of BUX80

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for BUX80 transistor

You can replace the BUX80 with the BUX81, MJ10001 or MJ423.
If you find an error please send an email to mail@el-component.com