MJ10001 Bipolar Transistor

Characteristics of MJ10001 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 500 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 20 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 50 to 600
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of MJ10001

Here is an image showing the pin diagram of this transistor.
If you find an error please send an email to mail@el-component.com