2N6678 Bipolar Transistor

Characteristics of 2N6678 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 400 V
  • Collector-Base Voltage, max: 650 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 8
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6678

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6678 transistor

You can replace the 2N6678 with the 2N6547, 2SC2429, 2SC2429A, 2SC2920, 2SC3058, 2SC3058A, BUX48, BUX48A, BUX48B, BUX48C or MJ10001.
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