2N6677 Bipolar Transistor

Characteristics of 2N6677 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 350 V
  • Collector-Base Voltage, max: 550 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 8
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6677

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6677 transistor

You can replace the 2N6677 with the 2N6547, 2N6678, 2SC2429, 2SC2429A, 2SC2920, 2SC3058, 2SC3058A, BUX48, BUX48A, BUX48B, BUX48C, MJ10000 or MJ10001.
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