2N6676 Bipolar Transistor

Characteristics of 2N6676 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 300 V
  • Collector-Base Voltage, max: 450 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 175 W
  • DC Current Gain (hfe): 8
  • Transition Frequency, min: 3 MHz
  • Operating and Storage Junction Temperature Range: -65 to +200 °C
  • Package: TO-3

Pinout of 2N6676

Here is an image showing the pin diagram of this transistor.

Replacement and Equivalent for 2N6676 transistor

You can replace the 2N6676 with the 2N6546, 2N6547, 2N6677, 2N6678, 2SC2429, 2SC2429A, 2SC2920, 2SC3058, 2SC3058A, BUX48, BUX48A, BUX48B, MJ10000 or MJ10001.
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