2SD1681-Q Bipolar Transistor

Characteristics of 2SD1681-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 18 V
  • Collector-Base Voltage, max: 20 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 1.2 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 150 MHz
  • Operating and Storage Junction Temperature Range: -55 to +125 °C
  • Package: TO-126

Pinout of 2SD1681-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1681-Q transistor can have a current gain of 70 to 140. The gain of the 2SD1681 will be in the range from 70 to 400, for the 2SD1681-R it will be in the range from 100 to 200, for the 2SD1681-S it will be in the range from 140 to 280, for the 2SD1681-T it will be in the range from 200 to 400.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1681-Q might only be marked "D1681-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1681-Q is the 2SB1141-Q.

Replacement and Equivalent for 2SD1681-Q transistor

You can replace the 2SD1681-Q with the 2SC1162, 2SC1368, 2SD439, 2SD793, 2SD882, BD185, KSD882, KSE200, KSH882, KTC2804, KTC2804-O, MJE200, MJE200G or MJE520.
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