KSH882 Bipolar Transistor

Characteristics of KSH882 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 5 V
  • Collector Current − Continuous, max: 3 A
  • Collector Dissipation: 10 W
  • DC Current Gain (hfe): 60 to 400
  • Transition Frequency, min: 90 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular 2SD882 transistor

Pinout of KSH882

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KSH882 transistor can have a current gain of 60 to 400. The gain of the KSH882-G will be in the range from 200 to 400, for the KSH882-O it will be in the range from 100 to 200, for the KSH882-R it will be in the range from 60 to 120, for the KSH882-Y it will be in the range from 160 to 320.

Complementary PNP transistor

The complementary PNP transistor to the KSH882 is the KSH772.

Replacement and Equivalent for KSH882 transistor

You can replace the KSH882 with the 2SD882, BD131, BD185, BD187, BD189, BDX35, BDX36, KSD882, MJE222, MJE225 or MJE520.
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