2SC1162 Bipolar Transistor
Characteristics of 2SC1162 Transistor
- Type: NPN
- Collector-Emitter Voltage, max: 35 V
- Collector-Base Voltage, max: 35 V
- Emitter-Base Voltage, max: 5 V
- Collector Current − Continuous, max: 2.5 A
- Collector Dissipation: 10 W
- DC Current Gain (hfe): 60 to 320
- Transition Frequency, min: 160 MHz
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-126
Pinout of 2SC1162
Classification of hFE
Marking
Complementary PNP transistor
Replacement and Equivalent for 2SC1162 transistor
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