KSE200 Bipolar Transistor

Characteristics of KSE200 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 45 to 180
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126
  • Electrically Similar to the Popular MJE200 transistor

Pinout of KSE200

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the KSE200 is the KSE210.

Replacement and Equivalent for KSE200 transistor

You can replace the KSE200 with the MJE200 or MJE200G.
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