MJE200G Bipolar Transistor

• Type: NPN
• Collector-Emitter Voltage, max: 25 V
• Collector-Base Voltage, max: 40 V
• Emitter-Base Voltage, max: 8 V
• Collector Current − Continuous, max: 5 A
• Collector Dissipation: 15 W
• DC Current Gain (h_fe): 45 to 180
• Transition Frequency, min: 65 MHz
• Operating and Storage Junction Temperature Range: -65 to +150 °C
• Package: TO-126
• The MJE200G is the lead-free version of the MJE200 transistor

Here is an image showing the pin diagram of this transistor.You can replace the MJE200G with the KSE200 or MJE200.