MJE200 Bipolar Transistor

Characteristics of MJE200 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 25 V
  • Collector-Base Voltage, max: 40 V
  • Emitter-Base Voltage, max: 8 V
  • Collector Current − Continuous, max: 5 A
  • Collector Dissipation: 15 W
  • DC Current Gain (hfe): 45 to 180
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-126

Pinout of MJE200

Here is an image showing the pin diagram of this transistor.

Complementary PNP transistor

The complementary PNP transistor to the MJE200 is the MJE210.

Replacement and Equivalent for MJE200 transistor

You can replace the MJE200 with the KSE200 or MJE200G.

Lead-free Version

The MJE200G transistor is the lead-free version of the MJE200.
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