2SD1669-Q Bipolar Transistor

Characteristics of 2SD1669-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 30 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220F

Pinout of 2SD1669-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1669-Q transistor can have a current gain of 70 to 140. The gain of the 2SD1669 will be in the range from 70 to 280, for the 2SD1669-R it will be in the range from 100 to 200, for the 2SD1669-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1669-Q might only be marked "D1669-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1669-Q is the 2SB1136-Q.

Replacement and Equivalent for 2SD1669-Q transistor

You can replace the 2SD1669-Q with the 2N6487, 2N6487G, 2N6488, 2N6488G, 2SC3345, 2SC3345-O, 2SC3346, 2SC3346-O, 2SC3709, 2SC3709-O, 2SC3709A, 2SC3709A-O, 2SC3710, 2SC3710-O, 2SC3710A, 2SC3710A-O, 2SD1062, 2SD1062-Q, BD545A, BD545B, BD545C, BD707, BD709, BD711, BD743A, BD743B, BD743C, BD907, BD909, BD911, BDT81, BDT81F, BDT83, BDT83F, BDT85 or BDT85F.
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