2SD1212-R Bipolar Transistor

Characteristics of 2SD1212-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD1212-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1212-R transistor can have a current gain of 100 to 200. The gain of the 2SD1212 will be in the range from 70 to 280, for the 2SD1212-Q it will be in the range from 70 to 140, for the 2SD1212-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1212-R might only be marked "D1212-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1212-R is the 2SB903-R.

Replacement and Equivalent for 2SD1212-R transistor

You can replace the 2SD1212-R with the 2SC3345, 2SC3709, 2SC3709A, 2SC4552, 2SC4552-M, 2SD1062, 2SD1062-R, 2SD1669, 2SD1669-R, BD545, BD545A, BDT81 or BDT81F.
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