2SD1062-R Bipolar Transistor

Characteristics of 2SD1062-R Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 40 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD1062-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1062-R transistor can have a current gain of 100 to 200. The gain of the 2SD1062 will be in the range from 70 to 280, for the 2SD1062-Q it will be in the range from 70 to 140, for the 2SD1062-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1062-R might only be marked "D1062-R".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1062-R is the 2SB826-R.

Replacement and Equivalent for 2SD1062-R transistor

You can replace the 2SD1062-R with the 2SC3345, 2SC3346, 2SC3709, 2SC3709A, 2SC3710, 2SC3710A, 2SC4552, 2SC4552-M, 2SD1669, 2SD1669-R, BD545A, BD545B, BD545C, BDT81, BDT81F, BDT83, BDT83F, BDT85 or BDT85F.
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