2SD1212-Q Bipolar Transistor

Characteristics of 2SD1212-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 30 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SD1212-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1212-Q transistor can have a current gain of 70 to 140. The gain of the 2SD1212 will be in the range from 70 to 280, for the 2SD1212-R it will be in the range from 100 to 200, for the 2SD1212-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1212-Q might only be marked "D1212-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1212-Q is the 2SB903-Q.

Replacement and Equivalent for 2SD1212-Q transistor

You can replace the 2SD1212-Q with the 2N6486, 2N6486G, 2N6487, 2N6487G, 2SC3345, 2SC3345-O, 2SC3709, 2SC3709-O, 2SC3709A, 2SC3709A-O, 2SD1062, 2SD1062-Q, 2SD1669, 2SD1669-Q, BD545, BD545A, BD705, BD707, BD743, BD743A, BD905, BD907, BDT81 or BDT81F.
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