2SB903-R Bipolar Transistor

Characteristics of 2SB903-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -30 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -12 A
  • Collector Dissipation: 35 W
  • DC Current Gain (hfe): 100 to 200
  • Transition Frequency, min: 120 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-220

Pinout of 2SB903-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB903-R transistor can have a current gain of 100 to 200. The gain of the 2SB903 will be in the range from 70 to 280, for the 2SB903-Q it will be in the range from 70 to 140, for the 2SB903-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB903-R might only be marked "B903-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB903-R is the 2SD1212-R.

Replacement and Equivalent for 2SB903-R transistor

You can replace the 2SB903-R with the 2SA1328, 2SA1451, 2SA1451A, 2SA1744, 2SA1744-M, 2SB1136, 2SB1136-R, 2SB826, 2SB826-R, BD546, BD546A, BDT82 or BDT82F.
If you find an error please send an email to mail@el-component.com