2SB829-Q Bipolar Transistor

Characteristics of 2SB829-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB829-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB829-Q transistor can have a current gain of 70 to 140. The gain of the 2SB829 will be in the range from 70 to 280, for the 2SB829-R it will be in the range from 100 to 200, for the 2SB829-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB829-Q might only be marked "B829-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB829-Q is the 2SD1065-Q.

Replacement and Equivalent for 2SB829-Q transistor

You can replace the 2SB829-Q with the 2SA1292, 2SA1292-Q, 2SB1230, 2SB1230-Q, 2SB1231, 2SB1231-Q, 2SB1232, 2SB1232-Q, BD246A, BD246B, BD246C, BD250A, BD250B, BD250C, BD746A, BD746B, BD746C or TIP36CA.
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