2SB1230 Bipolar Transistor

Characteristics of 2SB1230 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 50 to 140
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1230

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1230 transistor can have a current gain of 50 to 140. The gain of the 2SB1230-P will be in the range from 50 to 100, for the 2SB1230-Q it will be in the range from 70 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1230 might only be marked "B1230".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1230 is the 2SD1840.

Replacement and Equivalent for 2SB1230 transistor

You can replace the 2SB1230 with the 2SA1386, 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1492, 2SA2151, 2SB1231, 2SB1232, BD246C, BD250C, BD746C or TIP36CA.
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