2SB1232 Bipolar Transistor

Characteristics of 2SB1232 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -40 A
  • Collector Dissipation: 150 W
  • DC Current Gain (hfe): 50 to 140
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1232

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1232 transistor can have a current gain of 50 to 140. The gain of the 2SB1232-P will be in the range from 50 to 100, for the 2SB1232-Q it will be in the range from 70 to 140.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1232 might only be marked "B1232".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1232 is the 2SD1842.
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