2SB1231 Bipolar Transistor
Characteristics of 2SB1231 Transistor
- Type: PNP
- Collector-Emitter Voltage, max: -100 V
- Collector-Base Voltage, max: -110 V
- Emitter-Base Voltage, max: -6 V
- Collector Current − Continuous, max: -25 A
- Collector Dissipation: 120 W
- DC Current Gain (hfe): 50 to 140
- Operating and Storage Junction Temperature Range: -55 to +150 °C
- Package: TO-3P
Pinout of 2SB1231
Classification of hFE
Marking
Complementary NPN transistor
Replacement and Equivalent for 2SB1231 transistor
If you find an error please send an email to mail@el-component.com