2SB1230-Q Bipolar Transistor

Characteristics of 2SB1230-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 100 W
  • DC Current Gain (hfe): 70 to 140
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1230-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1230-Q transistor can have a current gain of 70 to 140. The gain of the 2SB1230 will be in the range from 50 to 140, for the 2SB1230-P it will be in the range from 50 to 100.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1230-Q might only be marked "B1230-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1230-Q is the 2SD1840-Q.

Replacement and Equivalent for 2SB1230-Q transistor

You can replace the 2SB1230-Q with the 2SA1302, 2SA1386, 2SA1386-P, 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1492, 2SA1492-P, 2SA2121, 2SA2151, 2SA2151-P, 2SB1163, 2SB1231, 2SB1231-Q, 2SB1232, 2SB1232-Q, 2SB1429, BD246C, BD250C, BD746C, NTE2329 or TIP36CA.
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