2SB829 Bipolar Transistor

Characteristics of 2SB829 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -50 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 70 to 280
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB829

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB829 transistor can have a current gain of 70 to 280. The gain of the 2SB829-Q will be in the range from 70 to 140, for the 2SB829-R it will be in the range from 100 to 200, for the 2SB829-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB829 might only be marked "B829".

Complementary NPN transistor

The complementary NPN transistor to the 2SB829 is the 2SD1065.

Replacement and Equivalent for 2SB829 transistor

You can replace the 2SB829 with the 2SA1292, BD246A, BD246B, BD246C, BD250A, BD250B, BD250C or TIP36CA.
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