2SD1065-Q Bipolar Transistor

Characteristics of 2SD1065-Q Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 50 V
  • Collector-Base Voltage, max: 60 V
  • Emitter-Base Voltage, max: 6 V
  • Collector Current − Continuous, max: 15 A
  • Collector Dissipation: 90 W
  • DC Current Gain (hfe): 70 to 140
  • Transition Frequency, min: 20 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SD1065-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SD1065-Q transistor can have a current gain of 70 to 140. The gain of the 2SD1065 will be in the range from 70 to 280, for the 2SD1065-R it will be in the range from 100 to 200, for the 2SD1065-S it will be in the range from 140 to 280.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SD1065-Q might only be marked "D1065-Q".

Complementary PNP transistor

The complementary PNP transistor to the 2SD1065-Q is the 2SB829-Q.

Replacement and Equivalent for 2SD1065-Q transistor

You can replace the 2SD1065-Q with the 2SC3256, 2SC3256-Q, 2SD1840, 2SD1840-Q, 2SD1841, 2SD1841-Q, 2SD1842, 2SD1842-Q, BD245A, BD245B, BD245C, BD249A, BD249B, BD249C, BD745A, BD745B, BD745C or TIP35CA.
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