2SB812-Q Bipolar Transistor

Characteristics of 2SB812-Q Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 70 to 150
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB812-Q

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB812-Q transistor can have a current gain of 70 to 150. The gain of the 2SB812 will be in the range from 40 to 250, for the 2SB812-P it will be in the range from 120 to 250, for the 2SB812-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB812-Q might only be marked "B812-Q".

Complementary NPN transistor

The complementary NPN transistor to the 2SB812-Q is the 2SD1032-Q.

Replacement and Equivalent for 2SB812-Q transistor

You can replace the 2SB812-Q with the 2SA1093, 2SA1102, 2SA1103, 2SA1104, 2SA1105, 2SA1263, 2SA1263-O, 2SA1264, 2SA1264-O, 2SA1264N, 2SA1264N-O, 2SA1292, 2SA1489, 2SA1490, 2SA1693, 2SA1694, 2SA1788, 2SA1803, 2SA1804, 2SA1939, 2SA1940, 2SB686, 2SB688, 2SB695, 2SB753, 2SB763, 2SB763-Q, 2SB775, 2SB778, 2SB812A, 2SB812A-Q, 2SB816, 2SB965, 2SB966, BD246A, BD246B, BD246C, BD250A, BD250B, BD250C, BD746A, BD746B, BD746C, BDV92, BDV94, BDV96, KTB688, KTB688B, KTB778 or TIP36CA.
If you find an error please send an email to mail@el-component.com