KTB778 Bipolar Transistor

Characteristics of KTB778 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -120 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -10 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 55 to 160
  • Transition Frequency, min: 10 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P
  • Electrically Similar to the Popular 2SB778 transistor

Pinout of KTB778

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The KTB778 transistor can have a current gain of 55 to 160. The gain of the KTB778-O will be in the range from 80 to 160, for the KTB778-R it will be in the range from 55 to 110.

Complementary NPN transistor

The complementary NPN transistor to the KTB778 is the KTD998.

Replacement and Equivalent for KTB778 transistor

You can replace the KTB778 with the 2SA1106, 2SA1146, 2SA1186, 2SA1265, 2SA1265-O, 2SA1301, 2SA1302, 2SA1303, 2SA1386, 2SA1386A, 2SA1386A-O, 2SA1386A-P, 2SA1386A-Y, 2SA1491, 2SA1492, 2SA1516, 2SA1695, 2SA1805, 2SA1941, 2SA1942, 2SA1943, 2SA1986, 2SA2120, 2SA2121, 2SA2151, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, 2SB1429, 2SB778, 2SB863, FJA4210, KTA1943, KTA1943A, KTA1962, KTA1962A, KTB688, KTB688B, MJW1302A, MJW1302AG or NTE2329.
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