2SB812A Bipolar Transistor

• Type: PNP
• Collector-Emitter Voltage, max: -80 V
• Collector-Base Voltage, max: -80 V
• Emitter-Base Voltage, max: -5 V
• Collector Current − Continuous, max: -4 A
• Collector Dissipation: 60 W
• DC Current Gain (h_fe): 40 to 250
• Operating and Storage Junction Temperature Range: -55 to +150 °C
• Package: TO-3P

Here is an image showing the pin diagram of this transistor.The 2SB812A transistor can have a current gain of 40 to 250. The gain of the 2SB812A-P will be in the range from 120 to 250, for the 2SB812A-Q it will be in the range from 70 to 150, for the 2SB812A-R it will be in the range from 40 to 90.Sometimes the "2S" prefix is not marked on the package - the 2SB812A might only be marked "B812A".The complementary NPN transistor to the 2SB812A is the 2SD1032A.The BDP952 (SOT-223) is the SMD version of the 2SB812A transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.You can replace the 2SB812A with the 2SA1106, BD246B, BD246C, BD250B, BD250C, BDV94, BDV96 or TIP36CA.