2SB812-P Bipolar Transistor

Characteristics of 2SB812-P Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 120 to 250
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB812-P

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB812-P transistor can have a current gain of 120 to 250. The gain of the 2SB812 will be in the range from 40 to 250, for the 2SB812-Q it will be in the range from 70 to 150, for the 2SB812-R it will be in the range from 40 to 90.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB812-P might only be marked "B812-P".

Complementary NPN transistor

The complementary NPN transistor to the 2SB812-P is the 2SD1032-P.

SMD Version of 2SB812-P transistor

The BDP950 (SOT-223) is the SMD version of the 2SB812-P transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB812-P transistor

You can replace the 2SB812-P with the 2SA1102, 2SA1292, 2SA1788, 2SB763, 2SB763-P, 2SB812A, 2SB812A-P, 2SB965, 2SB966, BD246A, BD246B, BD246C, BD250A, BD250B, BD250C, BDV92, BDV94, BDV96 or TIP36CA.
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