2SB812-R Bipolar Transistor

Characteristics of 2SB812-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -60 V
  • Collector-Base Voltage, max: -60 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -4 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 40 to 90
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB812-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB812-R transistor can have a current gain of 40 to 90. The gain of the 2SB812 will be in the range from 40 to 250, for the 2SB812-P it will be in the range from 120 to 250, for the 2SB812-Q it will be in the range from 70 to 150.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB812-R might only be marked "B812-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SB812-R is the 2SD1032-R.

Replacement and Equivalent for 2SB812-R transistor

You can replace the 2SB812-R with the 2SB695, 2SB763, 2SB763-R, 2SB812A, 2SB812A-R, BD246A, BD246B, BD246C, BD250A, BD250B, BD250C, BD746A, BD746B, BD746C, BDV92, BDV94, BDV96, NTE391, TIP34A, TIP34B, TIP34C or TIP36CA.
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