2SB631-D Bipolar Transistor

Characteristics of 2SB631-D Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -100 V
  • Collector-Base Voltage, max: -100 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1 A
  • Collector Dissipation: 8 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 130 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB631-D

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB631-D transistor can have a current gain of 60 to 120. The gain of the 2SB631 will be in the range from 60 to 320, for the 2SB631-E it will be in the range from 100 to 200, for the 2SB631-F it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB631-D might only be marked "B631-D".

Complementary NPN transistor

The complementary NPN transistor to the 2SB631-D is the 2SD600-D.

SMD Version of 2SB631-D transistor

The 2SA1368 (SOT-89) and 2SA1368-C (SOT-89) is the SMD version of the 2SB631-D transistor. These transistors are of the same type, have similar parameters and are designed for surface mounting.

Replacement and Equivalent for 2SB631-D transistor

You can replace the 2SB631-D with the 2SA1021, 2SA1021-R, 2SA1220, 2SA1220-R, 2SA1220A, 2SA1220A-R, 2SA1408, 2SA1408-R, 2SB631K, 2SB631K-D, 2SB649, 2SB649-B, 2SB649A, 2SB649A-B, BD792, KSA1220, KSA1220-R, KSA1220A, KSA1220A-R, MJE253, MJE253G or MJE254.
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