2SB649-B Bipolar Transistor

Characteristics of 2SB649-B Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 140 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SB649-B

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB649-B transistor can have a current gain of 60 to 120. The gain of the 2SB649 will be in the range from 60 to 320, for the 2SB649-C it will be in the range from 100 to 200, for the 2SB649-D it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB649-B might only be marked "B649-B".

Complementary NPN transistor

The complementary NPN transistor to the 2SB649-B is the 2SD669-B.

Replacement and Equivalent for 2SB649-B transistor

You can replace the 2SB649-B with the 2SA1021, 2SA1021-R, 2SA1408, 2SA1408-R, 2SB649A or 2SB649A-B.
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