2SA1021-R Bipolar Transistor

Characteristics of 2SA1021-R Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -150 V
  • Emitter-Base Voltage, max: -6 V
  • Collector Current − Continuous, max: -1.5 A
  • Collector Dissipation: 20 W
  • DC Current Gain (hfe): 60 to 120
  • Transition Frequency, min: 50 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-126

Pinout of 2SA1021-R

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1021-R transistor can have a current gain of 60 to 120. The gain of the 2SA1021 will be in the range from 60 to 320, for the 2SA1021-O it will be in the range from 100 to 200, for the 2SA1021-Y it will be in the range from 160 to 320.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1021-R might only be marked "A1021-R".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1021-R is the 2SC2481-R.

Replacement and Equivalent for 2SA1021-R transistor

You can replace the 2SA1021-R with the 2SA1408, 2SA1408-R, 2SB649A or 2SB649A-B.
If you find an error please send an email to mail@el-component.com