2SB1624-Y Bipolar Transistor

Characteristics of 2SB1624-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -110 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 15000 to 30000
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1624-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1624-Y transistor can have a current gain of 15000 to 30000. The gain of the 2SB1624 will be in the range from 5000 to 30000, for the 2SB1624-O it will be in the range from 5000 to 12000, for the 2SB1624-P it will be in the range from 6500 to 20000.

Equivalent circuit

2SB1624-Y equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1624-Y might only be marked "B1624-Y".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1624-Y is the 2SD2493-Y.

Replacement and Equivalent for 2SB1624-Y transistor

You can replace the 2SB1624-Y with the 2SA1106, 2SB1555, 2SB1555-C, 2SB1556, 2SB1556-C, 2SB1557, 2SB1557-C, 2SB1558, 2SB1558-C, 2SB1559, 2SB1559-Y, 2SB1560, 2SB1560-Y, BDV66C or BDV66D.
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