2SB1557 Bipolar Transistor

Characteristics of 2SB1557 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -140 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -7 A
  • Collector Dissipation: 70 W
  • DC Current Gain (hfe): 5000 to 30000
  • Transition Frequency, min: 30 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1557

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1557 transistor can have a current gain of 5000 to 30000. The gain of the 2SB1557-A will be in the range from 5000 to 12000, for the 2SB1557-B it will be in the range from 9000 to 18000, for the 2SB1557-C it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1557 equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1557 might only be marked "B1557".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1557 is the 2SD2386.

Replacement and Equivalent for 2SB1557 transistor

You can replace the 2SB1557 with the 2SA1106, 2SB1555, 2SB1556, 2SB1558, 2SB1559, 2SB1560 or BDV66D.
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