2SB1559 Bipolar Transistor

Characteristics of 2SB1559 Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 5000 to 30000
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1559

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1559 transistor can have a current gain of 5000 to 30000. The gain of the 2SB1559-O will be in the range from 5000 to 12000, for the 2SB1559-P it will be in the range from 6500 to 20000, for the 2SB1559-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1559 equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1559 might only be marked "B1559".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1559 is the 2SD2389.

Replacement and Equivalent for 2SB1559 transistor

You can replace the 2SB1559 with the 2SB1560 or BDV66D.
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