2SB1559-Y Bipolar Transistor

Characteristics of 2SB1559-Y Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -150 V
  • Collector-Base Voltage, max: -160 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -8 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 15000 to 30000
  • Transition Frequency, min: 65 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1559-Y

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1559-Y transistor can have a current gain of 15000 to 30000. The gain of the 2SB1559 will be in the range from 5000 to 30000, for the 2SB1559-O it will be in the range from 5000 to 12000, for the 2SB1559-P it will be in the range from 6500 to 20000.

Equivalent circuit

2SB1559-Y equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1559-Y might only be marked "B1559-Y".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1559-Y is the 2SD2389-Y.

Replacement and Equivalent for 2SB1559-Y transistor

You can replace the 2SB1559-Y with the 2SB1560, 2SB1560-Y or BDV66D.
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