BDV66C Bipolar Transistor

Characteristics of BDV66C Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -120 V
  • Collector-Base Voltage, max: -140 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -16 A
  • Collector Dissipation: 200 W
  • DC Current Gain (hfe): 1000
  • Operating and Storage Junction Temperature Range: -65 to +150 °C
  • Package: TO-3P

Pinout of BDV66C

Here is an image showing the pin diagram of this transistor.

Complementary NPN transistor

The complementary NPN transistor to the BDV66C is the BDV67C.

Replacement and Equivalent for BDV66C transistor

You can replace the BDV66C with the BDV66D.
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