2SB1624-O Bipolar Transistor

Characteristics of 2SB1624-O Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -110 V
  • Collector-Base Voltage, max: -110 V
  • Emitter-Base Voltage, max: -5 V
  • Collector Current − Continuous, max: -6 A
  • Collector Dissipation: 60 W
  • DC Current Gain (hfe): 5000 to 12000
  • Transition Frequency, min: 100 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SB1624-O

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SB1624-O transistor can have a current gain of 5000 to 12000. The gain of the 2SB1624 will be in the range from 5000 to 30000, for the 2SB1624-P it will be in the range from 6500 to 20000, for the 2SB1624-Y it will be in the range from 15000 to 30000.

Equivalent circuit

2SB1624-O equivalent circuit

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SB1624-O might only be marked "B1624-O".

Complementary NPN transistor

The complementary NPN transistor to the 2SB1624-O is the 2SD2493-O.

Replacement and Equivalent for 2SB1624-O transistor

You can replace the 2SB1624-O with the 2SA1106, 2SB1555, 2SB1555-A, 2SB1556, 2SB1556-A, 2SB1557, 2SB1557-A, 2SB1558, 2SB1558-A, 2SB1559, 2SB1559-O, 2SB1560, 2SB1560-O, BDV66C, BDV66D, BDW84D, MJH11017, MJH11017G, MJH11019 or MJH11019G.
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